A 130 nm CMOS low-power SAR ADC for wide-band communication systems

来源 :Journal of Semiconductors | 被引量 : 0次 | 上传用户:m987987
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This paper presents a low power 9-bit 80 MS/s SAR ADC with comparator-sharing technique in 130 nm CMOS process. Compared to the conventional SAR ADC,the sampling phase is removed to reach the full efficiency of the comparator. Thus the conversion rate increases by about 20% and its sampling time is relaxed. The design does not use any static components to achieve a widely scalable conversion rate with a constant FOM. The floorplan of the capacitor network is custom-designed to suppress the gain mismatch between the two DACs. The ‘set-anddown’ switching procedure and a novel binary-search error compensation scheme are utilized to further speed up the SA bit cycling operation. A very fast logic controller is proposed with a delay time of only 90 ps. At 1.2 V supply and 80 MS/s the ADC achieves an SNDR of 51.4 dB and consumes 1.86 mW,resulting in an FOM of 76.6 fJ/conversion-step. The ADC core occupies an active area of only 0.089 mm2. This paper presents a low power 9-bit 80 MS / s SAR ADC with comparator-sharing technique in 130 nm CMOS process. Compared to the conventional SAR ADC, the sampling phase is removed to reach the full efficiency of the comparator. rate increases by about 20% and its sampling time is relaxed. The design does not use any static components to achieve a broad scalable conversion rate with a constant FOM. The floorplan of the capacitor network is custom-designed to suppress the gain mismatch between the Two DACs. The ’set-anddown’ switching procedure and a novel binary-search error compensation scheme are utilized to further speed up the SA bit cycling operation. A very fast logic controller is proposed with a delay time of only 90 ps. At 1.2 V supply and 80 MS / s the ADC achieves an SNDR of 51.4 dB and consumes 1.86 mW, resulting in an FOM of 76.6 fJ / conversion-step. The ADC core occupies an active area of ​​only 0.089 mm2.
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