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在ＧａＡｓ（００１）衬底上，用分子束外延生长Ｓｂ（１１１）薄膜，用反射式高能电子衍射仪原位监控生长过程，用透射电子显微镜观察薄膜结构，并用ｖａｎｄｅｒＰａｕｗ方法测量了电阻率随生长温度的变化，观察到Ｓｂ薄膜半金属／半导体转变及其量子尺寸效应．
Growth of Sb (111) thin film was observed on a GaAs (001) substrate by molecular beam epitaxy. The growth of the Sb (111) thin film was observed by a high energy electron diffractometer. The structure of the thin film was observed by transmission electron microscopy and measured by the van der Pauw method. Temperature changes, the semi-metal / semiconductor transition of Sb film and its quantum size effect were observed.