论文部分内容阅读
报道了用高能电子衍射研究Ｃｏ在ＧａＡｓ（００１）表面上分子束外延生长的实验结果．发现当生长温度为１５０℃时，Ｃｏ膜的外延可以分为三个阶段：最初的３ｎｍＣｏ膜的晶体结构是体心立方亚稳相；接下来的４ｎｍ是复杂的多相结构；从７ｎｍ往后，Ｃｏ膜则是单晶的六角密堆积结构热力学稳定相．这一新的实验结果，澄清了前人有关这一体系外延层晶体结构的矛盾之处，并清晰地建立了Ｃｏ在ＧａＡｓ（００１）表面外延生长的物理图象．
Reported the experimental results of molecular beam epitaxy on Co (001) surface by high energy electron diffraction. It is found that when the growth temperature is 150 ℃, the epitaxy of the Co film can be divided into three stages: the initial 3nmCo film has a body-centered cubic metastable phase; the next 4nm is a complex multiphase structure; , Co film is a single crystal hexagonal close-packed structure thermodynamically stable phase. This new experimental result clarifies the contradictions of the crystal structure of the epitaxial layer of the previous system and clearly establishes the physical image of Co epitaxially grown on the GaAs (001) surface.