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本文介绍了聚四氟乙基材微带电路金属化孔优良这接技术,该技术采用低温等离子体轰击聚四氯乙烯基材孔壁,改变孔壁表面活性的原理,得到优良的金属化孔.并提供该方法的工艺流程,同时阐述该技术具有广泛推广价值.
This article describes the fine PTFE circuit microstrip metallization holes excellent access to the technology, the technology uses low-temperature plasma bombardment of polytetrafluoroethylene substrate wall, changing the pore wall surface activity of the principle, get excellent metalized holes .It also provides the process flow of this method, meanwhile expounds that this technology has a wide promotion value.