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七、HCD铬厚膜的性质 1.铬膜表面的观察 在改变基片电压的情况下,用HCD法将铬沉积在纯的多晶铁基片上。该膜的表面形貌采用扫描电子显微镜(SEM)进行观察。为了在观察膜表面的同时可观察膜的断裂面,以便估算膜的厚度,所以将样品弄弯到膜层断裂后进行观察。所观察的六个样品的镀膜条件为:基片温度20℃,沉积率0.2微米/分钟,基片电压分别为0伏、-10伏、-25伏、-50伏、
VII. Properties of HCD Chromium Thick Film 1. Observation of Chromium Film Surface Chromium was deposited on pure polycrystalline iron substrate by HCD method under the condition of changing substrate voltage. The surface morphology of the film was observed using a scanning electron microscope (SEM). In order to observe the fracture surface of the film while observing the surface of the film so as to estimate the thickness of the film, the sample is bent until the film is broken and observed. The observed coating conditions for the six samples were: substrate temperature of 20 ° C, deposition rate of 0.2 μm / min, substrate voltages of 0 volts, -10 volts, -25 volts, -50 volts,