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器件研究CG441型硅微波线性晶体管…………(一 1)光集成激光器的研究………………(一5)沟道区杂质浓度不均匀分布等效因子 …………(一8)一种适用于VLSIMOS器件的阈电压 模型…………………………(一57)高频小功率VMOS FET设计历研制 …………………………(二20)同轴型高频大功率振荡三极管 3DA310………………………(二25)讨论硅变容管电参数的稳定性………(二31)双向可控硅峰值关态电压的讨论……(二34)双外延调频变容二极管的电容变化指 数n值……………………………(三6)
Device Research CG441 silicon microwave linear transistor ............ (1) Research of optical integrated laser .................. (5) Equivalent factor of uneven distribution of impurity concentration in channel region ............ (1) A Threshold Voltage Model for VLSIMOS Devices .............................. (一 57) Design of High-Frequency, Low-Power VMOS FETs .............................. (二 20) Coaxial High Frequency High Power Oscillating Transistor 3DA310 ........................... (二 25) Discuss the Stability of Silicon Varactor Electrical Parameters ......... (31) Discussion of Triac Peak Off-State Voltage ... (( Two 34) dual-epitaxial FM varactor diode capacitance change index n value ................................. (three 6)