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详细讨论了碲镉汞晶体生长技术以及器件制备工艺,共分七章。 1)现代红外灵敏材料碲镉汞的出现回顾发展概况,评述其电性能、光学特性和结构特点。 2)高纯镉、汞和碲的制备除介绍提纯技术,还讨论了有关的化学分析方法。 3)碲镉汞晶体生长分别介绍了淬火-再结晶法、液-固体生长法、外延生长法以及其它方法。
The technology of the growth of HgCdTe crystal and the preparation process of the device are discussed in detail, which is divided into seven chapters. 1) The emergence of modern infrared sensitive material HgCdTe Review the development overview, review its electrical properties, optical properties and structural features. 2) Preparation of high-purity cadmium, mercury and tellurium Apart from the introduction of purification techniques, the relevant chemical analysis methods are also discussed. 3) The growth of HgCdTe crystals are introduced respectively quenching - recrystallization, liquid - solid growth, epitaxial growth and other methods.