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采用旋涂工艺将PbSe三维自组装超晶格镶嵌在两层聚合物PVP中,制备了基于PVP和PbSe三维自组装超品格复合体系的电双稳器件,器件结构为ITO/PVP/PbSe三维自组装超晶格/PVP/A1,研究了其电学性能和记忆效应.与参比器件ITO/PVP/A1相比,器件ITO/PVP/PbSe三维自组装超晶格/PVP/A1的电流-电压特性呈现出非常明显的电双稳特性和非易失记忆行为,在相同的电压下同时具有两种不同的导电状态:低电导的关态和高电导的开态.当PVP与PbSe超晶格的质量比为1∶1时,器件性能最好,其最大电流开关比为7×104,经过104 s仍几乎无衰减.通过对电流-电压曲线拟合,利用不同的导电模型对器件的载流子传输机制进行了解释.结果表明,PbSe三维自组装超晶格作为电荷陷阱,可以俘获、储存及释放电荷,对器件的电双稳性能能起决定性作用.“,”Electrical bistable devices utilizing three dimensional self-assembled lead selenide (PbSe) superlattices embedded between two polyvinyl pyrrolidone (PVP) layers were fabricated by using spin-coating technique.Each PbSe superlattice is a cluster with a uniform size of 50-60 nm,which consists of hundreds of PbSe nanoparticles with an average size of 5 nm.The current-voltage characteristics for the devices with an architecture of indium-tin-oxide (ITO)/PVP/PbSe superlattices/PVP/Al exhibit electrical bistabilities and memory behaviors due to the trapping,storring,and detrapping of the PbSe superlattices.The maximum ON/OFF ratio of the current bistability for the optimal device is 7 × 104,and it is maintained for 1 × 104 s with little degradation.The electrieal bistable properties and the cartier transport mechanisms of the devices are interpreted by the conduction models based on the results of fitting the current-voltage curves.