论文部分内容阅读
射频功率晶体管由于采用高优值的复杂几何图形和浅结薄基区的纵向结构,因此,其功率密度和电流密度较大、结温较高、抗烧毁耐量较低.而且,由于它多数用于军用整机和国防科研项目,因此,它的可靠性问题的矛盾将比普通中、小功率晶体管和低频大功率管更为突出,对它的可靠性问题的研究也更加引起设计制造者和产品使用者的极大注意.
RF power transistors have high power density and high current density, high junction temperature and low resistance to burn-in due to their high geometry and shallow geometry with a shallow base structure. Due to the majority of Therefore, the contradictions of its reliability problems will be more prominent than those of ordinary medium and small power transistors and low-frequency high-power transistors, and the research on its reliability problems will also cause more problems for designers and users Great care for product users.