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美帝贝尔实验室研制了一种新的雪崩二极管结构——双漂移雪崩结构。用离子注入工艺在普通的硅雪崩渡越时间(IMPATT)结构中加入第二个补充的漂移区,结果在毫米波范围内的性能得到很大改进:在50千兆赫下,一个双漂移二极管能输出 1瓦的功率,效率在14％以上;而普通的二极管只有0.5瓦的功率,效率10％。更重要的是用此工艺第一次在微波频率下以高效率模式(TRAPATT)连续工作产生出有用的功率。
A new avalanche diode structure - Dual Drift Avalanche Structure has been developed at the US-based Bell Labs. The addition of a second complementary drift region to an ordinary IMPATT structure using an ion implantation process resulted in a significant improvement in millimeter-wave performance: at 50 GHz, a dual-drift diode capable of Output 1 watt of power, efficiency of 14% or more; while the ordinary diode only 0.5 watts of power, efficiency of 10%. More importantly, it is the first time this process is used to produce useful power at microwave frequencies in high efficiency mode (TRAPATT).