【摘 要】
：
A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCE-PD) operated at a wavelength of 1.3μm with the full width at half maximu
【机 构】
：
Institute ofSemiconductors，Chinese Academy ofSciences，PO.Box 912，Beijing 100083“,”Beijing University
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A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCE-PD) operated at a wavelength of 1.3μm with the full width at half maximum of 4nm has been demonstrated. The GaInNAs RCE-PD was grown by molecular beam epitaxy using a homemade ion-removed dc plasma cell as a nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature, which is very beneficial for applications in long-wavelength absorption devices. For a 100μm diameter RCE-PD, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3 dB bandwidth is 308 MHz, which is limited by the resistance of p-type distributed Bragg reflector mirror. The tunable wavelength in a range of 18nm with the angle of incident light was observed.
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