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针对锥形半导体激光器中的脊形波导区宽度较小的问题,对半导体激光芯片制造中的刻蚀标记及刻蚀方法进行了研究。提出对于锥形半导体刻蚀中的脊型区域和锥形区域,采用不同精度的双标记刻蚀方法,细化对脊形波导和锥形波导的刻蚀中的对准问题,并使光刻标在不同的光刻版上相错位排列,在相应光刻版中相互遮挡,反复刻蚀中保证相应的光刻标清晰、完整。刻蚀后的芯片在电流为7 A时获得了中心波长963nm、连续功率4.026 W、慢轴方向和快轴方向激光光束参数乘积分别为1.593 mm·mrad和0.668 mm·mrad的激光输出。
For the problem that the width of the ridge waveguide region in the tapered semiconductor laser is small, the etching mark and the etching method in the manufacture of the semiconductor laser chip are studied. For the ridge region and the tapered region in the tapered semiconductor etching, the dual-mark etching method with different precision is used to refine the alignment problem in the etching of the ridge waveguide and the tapered waveguide, Marked in different lithography version of the phase arrangement of the wrong lithography in the corresponding lithography version of each block, repeated etching to ensure that the corresponding lithography standard clear and complete. The etched chip has a center wavelength of 963nm and a continuous power of 4.026 W at a current of 7 A. The laser beam output parameters of 1.593 mm · mrad and 0.668 mm · mrad respectively are obtained for the slow axis and fast axis directions.