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利用在一个单元上可以存储多位信息的赛道存储单元,设计了在近阈值电源电压下工作的非易失SRAM。通过恰当选择赛道存储单元的设计参数,并利用正向衬底偏压等技术,使其能在近阈值电源电压(0.5V)下可靠工作。该非易失SRAM与电源门控技术配合使用,可以解决在近阈值环境下泄漏电流占比过大的问题。仿真结果显示,在典型应用下,可降低传感网芯片中存储器部分能耗的40.9%。
Using track memory cells that store multiple bits of information on a single unit, nonvolatile SRAMs are designed that operate at near-threshold supply voltages. By properly selecting the design parameters of the track memory cells and using techniques such as forward substrate bias, it can operate reliably at near-threshold supply voltages (0.5V). This non-volatile SRAM and power gating technology work together to solve the problem of excessive leakage current in a near-threshold environment. Simulation results show that 40.9% of the memory portion of the sensor chip can be reduced under typical applications.