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因应新时代电子产品的需求,透明导电薄膜(Transparent Conductive Oxides,TCO)的应用也更加广泛,传统上是使用氧化铟锡(Indium Tin Oxide,ITO)薄膜为透明导电薄膜,但其在高温应用上较不稳定并且易放出毒性,因此,铝掺杂氧化锌薄膜(ZnO∶Al,AZO)有逐渐取代ITO的趋势。本论文将探讨掺杂不同铝含量的影响,并且就其光电特性加以说明,最后得到其光的透过率~85%、电阻率~7.3×10-3Ω·cm以及面粗糙度~28nm的铝掺杂氧化锌薄膜,其具有表面粗化、电流分布层及窗口层的作用。并且将掺铝的氧化锌薄膜应用于氮化镓发光二极管上,以掺铝氧化锌微结构作为透明传导层的氮化镓发光二极管(λD=530nm,300×300μm)在20mA的工作电流下,其正向电压值为3.3V,输出功率达1.7mW,并且由光学显微镜图可以得知,小电流注下其电流分布均匀。若将AZO制作参数再作适当优化调整,取代ITO作为p型氮化镓上的透明传导层的可行性应该很高。
Transparent Conductive Oxides (TCO) are also more widely used due to the demand of electronic products in the new era. Traditionally, indium tin oxide (ITO) films have been used as transparent conductive films, but at high temperature applications Less stable and easy to release toxicity, therefore, aluminum-doped zinc oxide thin films (ZnO: Al, AZO) have a gradual replacement of ITO. In this paper, the effect of doping with different aluminum contents will be explored, and their photoelectric properties will be explained. Finally, the aluminum with its light transmittance of ~ 85%, resistivity ~ 7.3 × 10-3Ω · cm and surface roughness of ~ 28nm Doped zinc oxide thin film, which has the role of surface roughening, current distribution layer and window layer. And the aluminum-doped zinc oxide thin film is applied to the gallium nitride light-emitting diode. The gallium nitride light-emitting diode (λD = 530 nm, 300 × 300 μm) doped with aluminum oxide zinc microstructure as the transparent conductive layer is exposed to a current of 20 mA, The forward voltage of 3.3V, the output power of 1.7mW, and the light microscope shows that the current injection of a small current distribution. If the AZO production parameters and then make the appropriate optimization and adjustment, replace the ITO as p-type gallium nitride on the transparent conductive layer should be highly feasible.