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氧化铟锡(ITO)半导体薄膜为典型的宽禁带半导体材料,具有短波高透射、长波高反射以及超宽的反射带等特性,满足热光伏(TPV)系统对滤波器的要求。以载流子浓度N和迁移率μ以及膜层厚度d为参数,对ITO薄膜的光学性质进行了仿真,给出了在不同参数下滤波器的光谱曲线。通过磁控溅射薄膜沉积系统制备了ITO薄膜,对退火处理后的滤波器进行了光学性能测试,最终得到可用于热光伏系统的ITO薄膜滤波器。制备的与GaSb电池匹配的滤波器截止波长为2μm,短波平均透射率接近70%,长波平均反射率接近70%,而且超宽的长波反射带延伸至10μm,可大大提高TPV系统的效率。
Indium tin oxide (ITO) semiconductor thin film is a typical wide bandgap semiconductor material with short wavelength high transmittance, long wavelength high reflection and ultra wide reflection band and other characteristics to meet the thermal photovoltaic (TPV) system requirements for the filter. The optical properties of ITO thin films were simulated with carrier concentration N and mobility μ and film thickness d as parameters, and the spectral curves of the filters under different parameters were given. The ITO thin films were prepared by magnetron sputtering thin film deposition system. The optical properties of the annealed filters were tested. Finally, ITO thin film filters were obtained for thermal photovoltaic systems. The prepared filter matched with GaSb cell has a cut-off wavelength of 2μm, an average short-wave transmittance of nearly 70%, an average long-wave reflectance of nearly 70%, and an ultra-wide longwave reflection band extending to 10μm, which can greatly improve the efficiency of the TPV system.