MgO/SrTiO_3(001)生长初期的各向异性晶格畸变

• 作 者: 魏贤华 崔传伟 张鹰 朱俊
• 机 构: 西南科技大学材料科学与工程学院,电子科技大学电子薄膜与集成器件国家重点实验室,
• 出 处: 真空科学与技术学报
• 发表日期: 2010年05期
• 关键词: MgO/SrTiO_3 外延生长 生长模式 失配位错 缓冲层 弛豫 衍射条纹 各项异性 激光能量密度 沉积速率

通过原位的反射高能电子衍射,监测并测量了MgO/SrTiO3(001)岛状生长初期过程中的面内、面外晶格常数的演变。薄膜的面内晶格在一开始生长时就发生弛豫,且大多数应变在2 nm厚度左右被释放并几乎保持稳定,而面外的晶格应变弛豫一直持续进行。这种应变的各项异性被认为与薄膜的织构导致的应变能变化有关。

The evolution of in-plane and out-of-plane lattice constants during the initial growth of MgO / SrTiO3 (001) islands was monitored and measured by in-situ reflection high-energy electron diffraction. The in-plane lattice of the film relaxes at the beginning of growth, and most of the strain is released and remains almost stable at about 2 nm, while the out-of-plane lattice strain relaxation continues. The anisotropy of this strain is believed to be related to the change in strain energy caused by the texture of the film.