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日本东京大学理化学研究所石渡晋太郎准教授等人研究小组发现,具有层状结构的CuAgSe新物质,其热电性能(室温~200℃)有望超过Bi2Te3系热电材料。Ag层中流动的电子具有Si单晶的电子移动度,是其良好热电性能的主要原因,是新型热电材料的开发指针。该研究小组着重研究具有与Bi2Te3系相同电子移动度的β-Ag2Se,为降低晶格振动引起的热传导,以
The research team of Assoc. Professor Shitou Shintaro, professor at Institute of Chemistry and Chemistry at the University of Tokyo in Japan, found that the new CuAgSe material with a layered structure is expected to outperform the Bi2Te3-based thermoelectric material by room temperature to 200 ° C. The electrons flowing in the Ag layer have the electron mobility of the Si single crystal and are the main reason for their good thermoelectric properties and are the development guidelines for the new thermoelectric materials. The research group focuses on β-Ag2Se with the same electron mobility as the Bi2Te3 system. In order to reduce the heat conduction caused by lattice vibration,