论文部分内容阅读
利用中频磁控溅射方法沉积制备了掺铒Al2O3薄膜,室温下测量了薄膜在1535nm波长处的光致发光光谱和抽运功率、掺铒浓度、退火温度对光致发光光谱强度的影响。结果表明,在真空气压为2×10-1Pa,氩气流量为70cm3/s,氧气流量为25～45cm3/s的条件下,最佳掺铒浓度为1.0at%,最佳退火温度为850℃。
The erbium-doped Al2O3 thin films were deposited by medium-frequency magnetron sputtering. The photoluminescence spectra and pumping power of the thin films at 1535 nm were measured at room temperature. The effects of erbium concentration and annealing temperature on the photoluminescence spectra were measured. The results show that the best erbium concentration is 1.0at% under the conditions of vacuum pressure 2 × 10-1Pa, argon flow rate 70cm3 / s and oxygen flow rate 25 ~ 45cm3 / s. The optimum annealing temperature is 850 ℃ .