Ultrafast dephasing of interband transitions in semiconductors

来源 :中国科学：数学英文版 | 被引量 : 0次 | 上传用户：guaidaokid2003

【摘要】

：

Two basic types of dephasing mechanisms, carrier-carrier and carrier-phonon scattering including hole-hole and hole-phonon scattering are proposed in the theory

【作者】

：

ZHANG Haichao

【机构】

：

1.StateKeyLaboratoryofUltrafastLaserSpectroscopy

【出处】

：

中国科学：数学英文版

【发表日期】

：

2001年10期

【关键词】

：

femtosecond 光谱学光极化 DEPHASING femtosecond spectroscopy optical polarization deph

【基金项目】

：

国家自然科学基金，广东省自然科学基金

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Two basic types of dephasing mechanisms, carrier-carrier and carrier-phonon scattering including hole-hole and hole-phonon scattering are proposed in the theory of ultrafast polarization dephasing of continuum transitions in bulk semiconductors. The contr

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Ultrafast dephasing of interband transitions in semiconductors

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