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采用溶胶-凝胶浸渍提拉法在普通玻璃片上制备了ZnO:Al薄膜。通过热重-差示扫描量热曲线分析了前驱体在热处理过程中的物理化学变化,采用X射线衍射分析了薄膜的结晶特性。结果表明:ZnO:Al的结晶过程分2个阶段:在约300℃开始成核和生长,在500℃左右进一步晶化。在413～523℃时,薄膜组成为ZnO:Al与残余碳的混杂物;温度升至500℃时,残余碳大部分完全氧化,ZnO:Al进一步晶化,使薄膜结晶质量变好。薄膜的最佳预热处理温度和后期热处理温度分别为420℃和530℃。通过扫描电镜观察发现:在530℃下后期热处理的薄膜具有致密均匀的微观组织结构,在400℃下真空退火处理后其表面方电阻最小(140?/□)。所有薄膜在可见光范围内透过率均超过90%。
ZnO: Al thin films were prepared on ordinary glass by sol-gel dip-coating method. The thermogravimetry and differential scanning calorimetry curves were used to analyze the physico-chemical changes of the precursors during the heat treatment. The crystalline properties of the films were analyzed by X-ray diffraction. The results show that the crystallization process of ZnO: Al is divided into two stages: nucleation and growth start at about 300 ℃ and further crystallization at about 500 ℃. When the temperature is up to 500 ℃, most of the residual carbon is completely oxidized and the ZnO: Al is further crystallized, resulting in a better crystal quality of the film. The optimum preheating temperature and post-heat treatment temperature of the films were 420 ℃ and 530 ℃, respectively. The results of scanning electron microscopy showed that the films annealed at 530 ℃ have a dense and uniform microstructure, and the surface resistance is the smallest (140 / /)) after vacuum annealing at 400 ℃. All films transmit over 90% in the visible range.