S波段GaN微波功率管脉冲射频加速寿命试验

• 作 者: 任俊华 李用兵 刘晓峰 余若祺 黄雒光
• 机 构: 中国电子科技集团公司第十三研究所,
• 出 处: 半导体技术
• 发表日期: 2016年05期
• 关键词: GaN 微波功率 GaN微波功率管 可靠性 平均失效时间 加速寿命试验 基站通信 可靠性水平 测量器件 结温

Ga N微波功率管在基站通信等领域具有重要应用,其可靠性对相关设备的性能有直接影响。利用红外热像分析技术测量器件的峰值结温,基于专用射频加速老化试验系统,在频率为2.85 GHz、输入功率为40.5 d Bm、脉冲宽度为3 ms、占空比为30%的脉冲射频工作条件下,对S波段Ga N微波功率管进行了壳温为150℃的加速寿命试验。应用Arrhenius模型对试验结果进行了分析和计算,推导出该器件在壳温为90℃的工作条件下其平均失效时间可达2.97×106h。结果表明,采用此试验方法可以用来评估第三代Ga N微波功率器件的可靠性水平。

Ga N microwave power tube has important applications in areas such as base station communications, and its reliability has a direct impact on the performance of related equipment. The peak junction temperature of the device was measured by infrared thermography. Based on a dedicated radio frequency accelerated aging test system, a pulsed RF working at a frequency of 2.85 GHz with an input power of 40.5 d Bm, a pulse width of 3 ms, and a duty cycle of 30% Conditions, the S-band Ga N microwave power tube shell temperature of 150 ℃ accelerated life test. The Arrhenius model was used to analyze and calculate the test results. The average failure time of the device under the working condition of 90 ℃ was 2.97 × 106h. The results show that this method can be used to evaluate the reliability of the third generation Ga N microwave power devices.