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4H-SiC metal Schottky field effect transistors(MESFETs) and Schottky barrier diodes(SBDs) were irradiated at room temperature with 1 MeV neutrons.The highest neutron flux and gamma-ray total dose were 1×10~(15) n/cm~2 and 3.3 Mrad(Si),respectively.After a neutron flux of 1×10~(13) n/cm~2,the current characteristics of the MES-FET had only slightly changed,and the Schottky contacts of the gate contacts and the Ni,Ti/4H-SiC SBDs showed no obvious degradation.To further increase the neutron flux,the drain current of the SiC MESFET decreased and the threshold voltage increased.φ_B of the Schottky gate contact decreased when the neutron flux was more than or equal to 2.5×10~(14) n/cm~2.SiC Schottky interface damage and radiation defects in the bulk material are mainly mechanisms for performance degradation of the experiment devices,and a high doping concentration of the active region will improve the neutron radiation tolerance.
4H-SiC metal Schottky field effect transistors (MESFETs) and Schottky barrier diodes (SBDs) were irradiated at room temperature with 1 MeV neutrons. The highest neutron flux and gamma-ray total dose were 1 × 10 ~ (15) n / cm ~ 2 and 3.3 Mrad (Si), respectively. After a neutron flux of 1 × 10 ~ (13) n / cm ~ 2, the current characteristics of the MES-FET had only slightly changed, and the Schottky contacts of the gate contacts and the Ni, Ti / 4H-SiC SBDs showed no significant degradation. To further increase the neutron flux, the drain current of the SiC MESFET decreased and the threshold voltage increased. φ_B of the Schottky gate contact decreased when the neutron flux was more than or equal to 2.5 × 10 ~ (14) n / cm ~ 2.SiC Schottky interface damage and radiation defects in the bulk materials are mainly mechanisms for performance degradation of the experiment devices, and a high doping concentration of the active region will improve the neutron radiation tolerance.