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一、硅材料发展水平最近,国外制造大功率硅可控整流器使用的材料,大多采用区熔单晶,因为区熔单晶比拉制单晶具有以下几个优点: (1)径向电阻率均匀度好; (2)含氧量少; (3)电阻率容易控制. 目前,国外制造耐高压硅可控整流元件,对电阻率范围要求很窄,如耐压2000伏的要求电阻率在90～120欧·厘米,耐压4000伏的要求在220～300欧·厘米.这对直拉法是难以控制的,而区熔单晶则可以控制. 从一九六五年无位错区熔单晶生产出来后,现在直径方面在增大.由于采用电子束方法,现在可使熔区更小,提纯率更高.
First, the level of development of silicon Recently, the materials used in the manufacture of high-power silicon controlled rectifier abroad, mostly using the zone melting single crystal, because the melting single crystal than drawn single crystal has the following advantages: (1) radial resistivity Uniformity is good; (2) less oxygen; (3) easy to control the resistivity of At present, foreign manufacturing high voltage silicon controlled rectifier device, the resistivity of the narrow range of requirements, such as 2000 volts with a required resistivity of 90 ~ 120 ohm · cm, 4000 volts withstand voltage requirements in the 220 ~ 300 ohm · cm This is the Czochralski method is difficult to control, and the melting of single crystal can be controlled from 1965 no dislocation zone Melting single crystal production, the diameter is now increased due to the use of electron beam method, the melting zone can now be made smaller, higher purification rate.