论文部分内容阅读
Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive evaporation.This paper reports the evolution of the structure,morphology and electrical characteristics with annealing temperatures in an oxygen ambience.X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 C.The capacitance in the accumulation region of Er 2 O 3 films annealed at 450 C is higher than that of as-deposited films and films annealed at other temperatures.An Er 2 O 3 /ErO x /SiO x /Si structure model is proposed to explain the results.The annealed films also exhibit a low leakage current density (around 1.38 × 10 4 A/cm 2 at a bias of 1 V) due to the evolution of morphology and composition of the films after they are annealed.
Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive evaporation. This paper reports the evolution of the structure, morphology and electrical characteristics with annealing temperatures in an oxygen ambience. X-ray diffraction and high resolution transimission electron microscopy Measurement showed that the films remain amorphous even after annealing at 700 C. The capacitance in the accumulation regions of Er 2 O 3 films annealed at 450 C is higher than that of as-deposited films and films annealed at other temperatures. An Er 2 O 3 / ErO x / SiO x / Si structure model is proposed to explain the results. The annealed films also exhibit a low leakage current density (around 1.38 × 10 4 A / cm 2 at a bias of 1 V) due to the evolution of morphology and composition of the films after they are annealed.