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成功地制作了有效保护环结构InP/InGaAsP/InGaAs雪崩光电二极管。该器件是平面结构,在倍增区,其n-InP层被n~--InP所掩埋。采用两步液相外延生长工艺,在(111)A晶向InP衬底上生长了这种结构。n~--InP二次生长之前,采用回熔技术来减少暗电流。
Successfully made effective protection of the ring structure InP / InGaAsP / InGaAs avalanche photodiode. The device is a planar structure in which the n-InP layer is buried by n- ~InP in the multiplication region. A two-step liquid-phase epitaxial growth process was used to grow this structure on (111) A-direction InP substrate. n ~ - InP secondary growth before the use of back-melting technology to reduce the dark current.