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本文提出热激活辐射过程和 Ｂｅｒｔｈｅｌｏｔ－型的非辐射复合过程互相竞争的简单模型解释无序半导体超晶格的光荧光防温度变化行为．预言了当温度升高荧光衰变时间在某一温度附近快速下降；获得了在高温时较大无序度的半导体超晶格比较小无序度的半导体超晶格荧光强，在低温时情况相反；且荧光峰随温度变化存在一个最大值．理论结果与实验观察到的无序半导体超晶格荧光行为一致．
In this paper, we propose a simple model in which the heat-activated radiation process and Berthelot-type non-radiative recombination process compete with each other to explain the anti-temperature change behavior of fluorescence in disordered semiconductor superlattices. It is predicted that when the temperature rises, the fluorescence decay time decreases rapidly at a certain temperature; the semiconductor superlattice with larger degree of disorder at high temperature is obtained. The fluorescence intensity of the semiconductor superlattice with the smaller degree of disorder is stronger than that at low temperature ; And there is a maximum of fluorescence peak with temperature change. The theoretical results are consistent with the experimentally observed superlattice fluorescence behavior of disordered semiconductors.