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以石墨为代表的碳基材料,由于其良好的高温性能及自溅射率低等优点,长期以来作为低Z面对等离子体候选材料之一而倍受关注。但是它具有较差的可焊接性、较高的化学溅射率、高的氢吸附率以及热解吸过程中产生大量甲烷等碳氢化合物对等离子体的杂质控制产生
Carbon-based materials, represented by graphite, have long been regarded as one of the plasma candidate materials for low Z-face due to their good high temperature performance and low self-sputtering rate. However, it has poor solderability, high chemical sputtering rate, high hydrogen adsorption rate, and control of impurities in the plasma due to the generation of large amounts of hydrocarbons such as methane during thermal desorption