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采用高选择和自终止多孔氧化硅全隔离技术制备了高质量的ＳＯＩ材料。研究了在该材料上采用２μｍＣＭＯＳ工艺制备的不同沟道长度的Ｐ沟ＭＯＳＦＥＴ的６０Ｃｏγ射线总剂量辐照特性，表明经５ｋＧｙ（Ｓｉ）辐照后，器件仍有特性，但阈值电压有较大的漂移，这主要是由栅氧化层中的辐照感生电荷而引起。不同沟道长度ＰＭＯＳＦＥＴ的辐照特性基本相同。经一段时间室温退火，阈值电压出现回漂。
A high-quality SOI material was prepared using high-selectivity and self-terminating porous silicon oxide full isolation technology. The total dose radiation characteristics of 60Co γ-ray of P-channel MOSFET with different channel length prepared by 2μm CMOS process on this material were studied. The results show that the device still has the characteristic after irradiated by 5kGy (Si), but the threshold voltage is larger Drift, which is mainly caused by the radiation induced charge in the gate oxide. The radiation characteristics of PMOSFETs with different channel lengths are basically the same. After a period of room temperature annealing, the threshold voltage appears back drift.