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采用喷涂热解法制备了以Cd2SnO4为代表的四种半导体薄膜，即Cd2SDO4，In2SnO5，TiSnO4及Zn2SnO4。测试了薄膜的半导体、光学和电学性能，得到了In2SnO5，Cd2SpO4薄膜电阻率的范围在10（－3）Ω·cm和高的透射比（可见光）；TiSnO4薄膜高的反射比（红外光）；同时，比较溅射法对结果进行了讨论。
Four kinds of semiconductor films typified by Cd2SnO4, namely Cd2SDO4, In2SnO5, TiSnO4 and Zn2SnO4, were prepared by spray pyrolysis. The resistivity of In2SnO5 and Cd2SpO4 thin films is in the range of 10 (-3) Ω · cm and high transmittance (visible light); the high reflectance (infrared light) of TiSnO4 thin films; At the same time, the results of the comparison sputtering method were discussed.