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据《科技开发动态》2003年第10期报导,该发明专利是利用注氧隔离(SIMDX)技术制备全介质隔离的硅量子线的方法。其特征是:将SOI衬底材料的制备工艺与其后形成硅量子线的牺牲热氧化工艺结合在一起;在制备SOI衬底材料的过程中完成硅量子线的制备,具体包括三个步骤:(a)确定量子线区域并在其四周光刻出沟槽;(b)离子注入;(c)高温退火。该方法在减少工艺步骤、降低成本的同时提高了硅量子线的质量。所制备的硅量子线适合于制造单子晶体管(SET)等固体纳米器件。
According to “Science and Technology Development,” No. 10, 2003 reported that the invention patent is the use of oxygen injection isolation (SIMDX) technology for the preparation of fully dielectric isolated silicon quantum wire method. The method is characterized in that the preparation process of the SOI substrate material is combined with the subsequent sacrificial thermal oxidation process of forming the silicon quantum wires; the preparation of the silicon quantum wires is completed in the process of preparing the SOI substrate material, and specifically comprises the following steps of: ( a) Determine the area of the quantum wire and etch the trench around it; (b) Ion implant; (c) High temperature anneal. The method improves the quality of the silicon quantum wire while reducing the process steps and the cost. The prepared silicon quantum wire is suitable for manufacturing solid nano devices such as a single transistor (SET).