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本文从栅源串联电阻R_s和有效栅长L_f两方面论述了深槽自对准斜蒸栅结构可明显减小R_s与缩短L_f,有利于降低器件的噪声系数。 本文还用相关栅长L_a和器件在低温下的性能说明GaAs材料的质量对器件噪声系数的影响。提高GaAs半绝缘衬底和缓冲层质量以及与有源层交界面附近的迁移率,可较明显地缩短相关栅长L_a,降低器件噪声。 采用这一器件结构,并选用质量较高的GaAs材料,制得的MESFET,在12GHz下相关增益G_a为7.5dB,噪声系数NF_(min)为1.4dB,与理论预计值相符。
In this paper, the deep-trench self-aligned oblique-angle steam grid structure is discussed from the gate-source series resistance R_s and the effective gate length L_f, which can reduce the R_s and shorten the L_f obviously, which is helpful to reduce the noise figure of the device. The effect of GaAs material quality on the noise figure of the device is also illustrated in this paper by using the relevant gate length L_a and the performance of the device at low temperatures. Increasing the quality of the GaAs semi-insulating substrate and the buffer layer and the mobility near the interface with the active layer can significantly shorten the relevant gate length L_a and reduce the device noise. Using this device structure and using high quality GaAs material, the MESFET obtained has a gain G 7.5 of 7.5 dB and a noise figure NF min of 1.4 dB at 12 GHz, which is consistent with the theoretical prediction.