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用切克劳斯基法,掺入InN可以生长出低缺陷InSb单晶。通过腐蚀观察对掺入InN的InSb晶体进行了研究,并与未掺杂的晶体做了对比分析。当掺杂量超过1.5×10~(17)厘米~(-3)时,发现穿透缺陷和碟形缺陷显著减少。已用这种晶体制备了高质量的光导红外探测器。
In the Czochralski method, InN can grow low-defect InSb single crystals. InSb doped with InN was investigated by etching observation and compared with undoped crystals. When the doping amount exceeds 1.5 × 10 ~ (17) cm ~ (-3), it is found that the penetration defects and disc defects are significantly reduced. This crystal has been used to prepare high-quality photoconductive infrared detectors.