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射频(1兆赫)下辉光放电分解四乙氧基硅烷,已制成有机硅聚合物薄膜和氧化硅薄膜。研完了淀积速率作为时间、总压力、所充气体种类、四乙氧基硅烷分压、衬底温度和位置的函数关系。充以氩气和不充气体时,电子和四乙氧基硅烷气体分子的碰撞是导致其分解的主要因素。充以氧气时。四乙氧基硅烷气体与氧原子间的相互作用则是反应机构的主要因素。在氧的等离子体中,形成了非晶态的氧化硅膜,而在氩的等离子体中或不充气体时,则形成有机硅聚合物薄膜。氧化物和聚合物薄膜都是透明、光滑、无针孔以及与金属和非金属物的粘附性很强。当氧气相对于四乙氧基硅烷蒸气的比率高时,所淀积的非晶态的二氧化硅薄膜的红外光谱与热生长的二氧化硅薄膜的光谱相似但不相等。当氧气相对于蒸气的比率低并在500℃以上温度时,淀积的二氧化硅膜的组分变为缺氧的。用红外光谱学研究了在低衬底温度下淀积薄膜的羟基族的性质.
Glow Discharge Decomposition Tetraethoxysilane at RF (1 MHz), Silicone Polymer Films and Silicon Oxide Films have been fabricated. The deposition rate was plotted as a function of time, total pressure, type of gas charged, tetraethoxysilane partial pressure, substrate temperature and position. Collisions between electrons and tetraethoxysilane gas molecules when charged with argon and without gas are the major contributors to their decomposition. When filled with oxygen. The interaction of tetraethoxysilane gas with oxygen atoms is the main factor of the reaction mechanism. In the oxygen plasma, an amorphous silicon oxide film is formed, and in argon plasma or without gas, a silicone polymer film is formed. Both oxide and polymer films are clear, smooth, pin-hole-free, and strongly adhere to metallic and non-metallic objects. When the ratio of oxygen to tetraethoxysilane vapor is high, the infrared spectrum of the deposited amorphous silica film is similar but not equal to the spectrum of the thermally grown silica film. When the ratio of oxygen to steam is low and at temperatures above 500 ° C, the composition of the deposited silica film becomes oxygen deficient. The properties of the hydroxyl groups of the deposited films at low substrate temperatures were investigated by infrared spectroscopy.