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一、引言 1954年肖克莱提出在半导体中利用渡越时间产生高频负阻的晶体管渡越时间振荡器,后来由于效率太低而未得到大的发展。1958年W.T.Read提出了用雪崩注入的渡越时间二极管,1965年在硅二极管中实现了这种振荡模式以后,发展迅速,水平很高,但是它的噪声太大,限制了某些方面的应用。1968年H.W.Rüegg和G.T.Wright分别提出了用穿通方式注入的渡越时间二极管,能够有可用的效率和较低的噪声。1971年D.J.Coleman.Jr.和S.M.Sze作出了这种模式工作的二极管,并报导
I. INTRODUCTION In 1954 Shockley proposed a transistor time-of-flight oscillator that uses high-frequency negative resistance in transit time in semiconductors and was not greatly developed due to its inefficiency. In 1958, WTRead proposed avalanche-injected time-of-flight diodes. After this oscillation mode was implemented in silicon diodes in 1965, it developed rapidly and at a high level. However, its noise was too high, which restricted the application of certain aspects . In 1968 H.W.Rüegg and G.T. Wright proposed time-of-flight diodes injected by punch-through, respectively, with the available efficiency and lower noise. In 1971, D.J.Coleman.Jr. and S.M.Sze made diodes for this mode of operation and reported