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研制了用于卫星通讯接收设备的微波低噪声集成晶体管放大器。在3.7～4.2千兆赫的频带范围内,放大器的增益≥24±0.5分贝,噪声系数<5.5分贝。经过连续两批抽样考核表明,这种放大器可满足一般地面设备的可靠性要求。放大器采用CG40型硅双极晶体管,电路元件混合集成于高纯氧化铝陶瓷基片上。装配方法上采用了微带基片的“面焊接”技术。为了便于使用,在放大器内部加有集成微带隔离器。本文叙述了放大器的设计、制作和性能结果。
Developed for satellite communications receiver microwave low noise integrated transistor amplifier. In the frequency range of 3.7 to 4.2 GHz, the gain of the amplifier is ≥24 ± 0.5 dB and the noise figure is <5.5 dB. After two consecutive batches of sample tests show that this amplifier to meet the reliability requirements of general ground equipment. Amplifier using CG40-type silicon bipolar transistor, circuit components mixed integrated in high-purity alumina ceramic substrate. Assembly method using the microstrip substrate “surface welding” technology. For ease of use, there is an integrated microstrip isolator inside the amplifier. This article describes the amplifier design, production and performance results.