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用射频（ＲＦ）磁控溅射制备了立方氮化硼（ｃ－ＢＮ）薄膜．ＦＴＩＲ光谱和电子衍射实验表明：该薄膜是纯的，其结晶度很高．ＦＴＩＲ光谱研究指出，基板负偏压是ｃ－ＢＮ相形成的重要因素，但也由此产生了ｃ－ＢＮ薄膜的应力，且负偏压越高，产生的应力越大．比较透射谱和反射谱的结果，ｃ－ＢＮ薄膜表面层的应力小于内部的．按照ｃ－ＢＮ形成的压力模型，表面应力小到一定程度可能影响ｃ－ＢＮ的继续生长．一个特制的分层结构ＢＮ薄膜保留了由于应力造成的ｃ－ＢＮ的裂纹，这个裂纹分布在一些同心圆上，中心是缺陷或杂质，同心圆之间有明显的分界线，把ｃ－ＢＮ表层分割成许多应力区．
Cubic Boron Nitride (c-BN) thin films were prepared by radio frequency (RF) magnetron sputtering. FTIR spectroscopy and electron diffraction experiments show that the film is pure and its crystallinity is high. FTIR spectroscopy indicates that the substrate negative bias is an important factor in the formation of c-BN phase, but also results in the stress of the c-BN thin film. The higher the negative bias voltage, the greater the stress generated. Comparing the transmission spectrum with the reflection spectrum, the stress of the c-BN thin film surface layer is less than that of the interior. According to the pressure model formed by c-BN, the surface stress to a certain extent may affect the continued growth of c-BN. A special layered BN film retains c-BN cracks caused by stress. The cracks are distributed on some concentric circles with defects or impurities in the center. There is a clear dividing line between the concentric circles. The c-BN surface layer Divided into many stress areas.