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InP以其众多的优越特性使之在许多高技术领域有广泛应用。掺硫n型InP材料用于激光器、LED、光放大器、光纤通信等光电领域。为了降低成本和适应新型器件制造的要求,本文进行了直径100mm掺硫InP单晶生长和性质研究。首先解决了大容量直接合成技术,其次解决了大直径单晶生长的关键技术,保证了一定的成晶率。采用降低温度梯度等措施,降低位错密度,提高晶体完整性。制备出100mm掺硫InP整锭<100>InP单晶和单晶片。经过测试其平均EPD小于5×104cm-2,载流子浓度大于3×1018cm-3。本文还对影响材料成晶的放肩角进行了研究,一般生长大直径单晶采用大于70°或平放肩技术都可以有效地避免孪晶的产生。
InP has many of its superior features make it widely used in many high-tech fields. Sulfur-doped n-type InP materials for laser, LED, optical amplifiers, optical fiber communications and other fields. In order to reduce costs and meet the requirements of new device manufacturing, this paper carried out a diameter of 100mm sulfur-doped InP single crystal growth and properties. First, solve the large-capacity direct synthesis technology, followed by the solution to the key technology of large-diameter single crystal growth, to ensure a certain degree of crystallization rate. By reducing the temperature gradient and other measures to reduce the dislocation density and improve the crystal integrity. A 100mm Sputtered InP ingot <100> InP single crystal and a single wafer were prepared. After testing the average EPD less than 5 × 104cm-2, the carrier concentration is greater than 3 × 1018cm-3. In this paper, we also study on the shoulder angle that affects the crystal formation of materials. Generally, the growth of large diameter single crystal with more than 70 ° or flat shoulder technology can effectively prevent the generation of twins.