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南京电子器件研究所近期研制成功1.44~1.68GH z 220W硅微波脉冲功率晶体管。该器件在1.44~1.68 GH z频带内,脉宽200μs,占空比10%和40V工作电压下,全带内脉冲输出功率大于220 W,功率增益大于7.0 dB,效率大于45%。该器件采用高效梳条状结构,单元间距6μm,发射极和基极线宽0.9μm
Nanjing Institute of Electronics recently developed successfully 1.44 ~ 1.68GH z 220W silicon microwave pulse power transistor. The pulse output power of the device is greater than 220 W, the power gain is greater than 7.0 dB, and the efficiency is greater than 45% under the pulse width of 200μs, duty ratio of 10% and 40V at 1.44 ~ 1.68 GHz band. The device uses high-efficiency comb strip structure, cell spacing 6μm, emitter and base line width of 0.9μm