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本文用深能级瞬态谱(DLTS)研究了GaP:N LED′s老化过程中深能级的变化。老化条件为:在正偏直流I=800mA下室温老化约650小时。发现GaP:N LED在老化前只存在两个能级△E_x和△E_a,而在老化的过程中观察到一个新能级△E_b逐渐形成。结合老化前后测量的LED′s发光光谱、光通、C-V特性及CLI、EBIC和SEI结果,讨论了深能级在GaP:N LED老化过程中对发光效率和退化特性的影响,认为△E_b是限制GaP:N LED发光效率及退化特性的无辐射复合中心。
In this paper, deep level transient spectroscopy (DLTS) to study the GaP: N LED’s aging process changes in the deep level. The aging conditions are: aging at room temperature for about 650 hours at a positive bias current of I = 800 mA. It is found that there are only two energy levels △ E_x and △ E_a in the GaP: N LED before aging, while a new energy level ΔE_b is gradually observed in the aging process. The effects of deep level on the luminescent efficiency and degradation characteristics during the aging of GaP: N LED were discussed based on the LED’s luminescence spectra, lumen and CV characteristics and CLI, EBIC and SEI measurements before and after aging. It is considered that △ E_b is Radiation-free recombination centers that limit the luminescent efficiency and degradation characteristics of GaP: N LEDs.