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光电倍增管是近六十年来发展起来的真空电子器件。早在1887年赫茲(H.Hertz)发现了光电发射效应,一年后,哈耳瓦斯、斯托列托夫及盖脱耳(Geitel)等人分别创制出光电管,并发现光电发射无惯性、光电发射与光强成正比以及光电疲乏现象。由于光电效应对于建立原子物理和光的量子理论概念具有重要意义,因而广泛开展了这方面的研究工作。1902年奥斯汀(L.W.Austin)与斯达克(H.Starke)首先观察到次级发射现象。利用次级电子放大的电子器件的第一批专利出现于1919年〔斯列辟盎(Slepian)设计的单级倍增
Photomultiplier tube vacuum electronic devices developed in the past six decades. As early as 1887, H. Hertz discovered the photoelectric emission effect. One year later, Havalis, Storroff and Geitel, respectively, created phototransistors and found that photoelectric emission has no inertia , Photoelectric emission and light intensity is proportional to the phenomenon of photoelectric fatigue. Since the photoelectric effect is of great importance for establishing the quantum theory concept of atomic physics and light, research work in this area has been extensively carried out. 1902 L.W.Austin and H. Starke first observed the phenomenon of secondary launches. The first patents on the use of secondary electron amplification of electronic devices appeared in 1919 [Slepian designed single-stage multiplication