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During the process of molecular beam epitaxy employing a DC plasma as N source, the effects of the growth temperature, growth rate and As 4 pressure on the optical properties of GaInNAs Quantum Well(QW) are similar to those of InGaAs QW with the same In contents. In the range of 400 to 470℃, elevating growth temperature is beneficial to the improvement in the photoluminescence (PL) peak intensity of GaInNAs QW, but obviously broadens the full width at half maximum PL peak. The improvement of optical properties and the reduction of N incorporation have been observed by increasing the growth rate. As 4 pressure mainly affects the optical properties of GaInNAs QW rather than N incorporation does.
During the process of molecular beam epitaxy employing a DC plasma as N source, the effects of the growth temperature, growth rate and As 4 pressure on the optical properties of GaInNAs Quantum Well (QW) are similar to those of InGaAs QW with the same In contents. In the range of 400 to 470 ° C., elevating growth temperature is beneficial to the improvement in the photoluminescence (PL) peak intensity of GaInNAs QW, but obviously broadens the full width at half maximum PL peak. The improvement of optical properties and the reduction of N incorporation have been observed by increasing the growth rate. As 4 pressure mainly affects the optical properties of GaInNAs QW rather than N incorporation does.