Fabrication of Enhancement Mode Ga N Metal- Insulator-Semiconductor Field Effect Transistor

• 作 者: 陈鹏 张荣 周玉刚 罗志云 谢世勇 陈志忠 李卫平 郑有炓
• 出 处: 半导体学报
• 发表日期: 2000年03期
• 关键词: Insulator MESFET piezoelectric drain leakage MOCVD fabrication breakdown nitride

The enhancement mode GaN metal|insulator|semiconductor field effect transistor (E|MISFET) is successfully fabricated on a GaN/AlGaN/GaN double heterojunction structure with SiO-2 as the insulator layer. The enhancement mode DC characteristics have been first achieved in the device with the gate|length of 6μm, 10μm and gate width of 100μm. The device with gate length of 6μm shows the DC transconductance of 0 6 mS/mm and the maximum drain|source current of 0.5mA. The gate leakage current is lower than 10 -6 A at the bias of -10V while the gate breakdown voltage is higher than 20V. This result proves the presence of a piezoelectric field in the heterojunction,the strongly asymmetric band bending and the carriers distribution caused by the piezoelectric field.

The enhancement mode GaN metal | insulator | semiconductor field effect transistor (E | MISFET) is successfully fabricated on a GaN / AlGaN / GaN double heterojunction structure with SiO - 2 as the insulator layer. The enhancement mode The device with gate length of 6 μm shows the DC transconductance of 0 6 mS / mm and the maximum drain | source current of 0.5mA. The gate leakage current is lower than 10 -6 A at the bias of -10V while the gate breakdown voltage is higher than 20V. This result proves the presence of a piezoelectric field in the heterojunction, the strongly asymmetric band bending and the carriers distribution caused by the piezoelectric field.