硅抛光片表面时间依赖性雾产生的原因分析

• 作 者: 刘云霞 史训达 李俊峰 林霖 赵晶 刘卓
• 机 构: 有研半导体材料股份有限公司,
• 出 处: 微纳电子技术
• 发表日期: 2013年12期
• 关键词: time-dependent haze (TDH) metal particle polished silicon wafer humidity

阐述了硅片表面时间依赖性雾(TDH)的形成过程、颗粒分布、形态以及检测方法。时间依赖性雾产生的原因包括清洗后化学液体的残留、清洗后硅片的干燥程度、片盒的洁净度和干燥度、表面金属以及硅片存放的环境(洁净度、温湿度和化学气氛)等。给出了不同的因素诱发时间依赖性雾的机理、颗粒分布、形态及消除方法。时间依赖性雾都可以用SC1湿法清洗掉。有些有时间依赖性雾的硅片用SC1洗掉后不会再产生,但对Cu引起的时间依赖性雾,硅片用SC1洗掉后,存放一段时间还会产生时间依赖性雾。

The formation process, particle distribution, morphology and detection methods of time-dependent surface fog (TDH) on silicon wafer are described. The reasons for the time-dependent mist include the residue of chemical liquid after cleaning, the degree of dryness of wafer after cleaning, the cleanliness and dryness of the cassette, the surface metal and the environment in which the silicon wafer is stored (cleanliness, temperature and humidity and chemical atmosphere) Wait. The mechanism, particle distribution, morphology and elimination method of time-dependent fog induced by different factors are given. Time-dependent fog can be cleaned with SC1 wet. Some time-dependent fogging wafers will not be produced after they have been washed off with SC1, but time-dependent fogging due to Cu and time-dependent fogging will occur if stored for a period of time after wafers are washed with SC1.