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研究了市售低噪声GaAsFET经受高湿度、离子沾污和温度循环而引起的失效机理。这类器件将用在那种不利的环境条件下。已对四个不同厂家的铝和金/难熔合金栅器件进行了研究。金/难熔栅对由恶劣环境引起的退化不够灵敏。确定了失效机理以及与器件电特性退化的关系。
The failure mechanism of commercially available low-noise GaAsFET under high humidity, ionic contamination and temperature cycling was investigated. Such devices will be used under the adverse environmental conditions. Four different manufacturers of aluminum and gold / refractory alloy gate devices have been studied. Gold / refractory grids are insensitive to degradation caused by harsh environments. Determine the failure mechanism and the relationship between the degradation of the electrical properties of the device.