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采用金相显微镜,X射线异常透射,X射线反射和红外显微镜技术研究了舟生长的重掺Te—GaAs体单晶(n>10~(18)cm~(-3))的不均匀性。观察到了重掺Te-CaAs体单晶中杂质沉淀和夹杂物。用X射线异常透射观察到了杂质分凝的辉纹。这些缺陷的形成和重掺Te的程度以及晶体生长期间的拉晶工艺有关。
The inhomogeneity of the Te - GaAs bulk single crystal (n> 10 ~ (18) cm ~ (-3)) grown on the boat was investigated by metallographic microscope, X - ray anomalous transmission, X - ray reflection and infrared microscope. Impurity precipitates and inclusions in heavily doped Te-CaAs bulk single crystals were observed. Abnormalities in the segregation of impurities were observed by X-ray anomalous transmission. The formation of these defects is related to the degree of heavily doped Te and the crystal pulling process during crystal growth.