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研究了在（１１１）Ｓｉ衬底上沉积５ｎｍＰｔ膜经不同工艺成形后其反应产物及膜的连续性．结果表明高温短时间退火（６００℃、３ｍｉｎ）有利于形成连续的ＰｔＳｉ膜
The reaction products and film continuity of 5nm Pt film deposited on (111) Si substrate by different processes were studied. The results show that high temperature and short time annealing (600 ℃, 3min) is conducive to the formation of continuous PtSi film