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采用改进的快速推舟液相外延技术在GaAs衬底上成功地生长了GaSb量子点材料.通过原子力显微镜观测了不同生长参数下GaSb量子点材料的形貌(形状、尺寸、密度、尺寸分布均匀性等).分析了不同衬底、不同生长源配比、生长源与衬底的不同接触时间等生长条件参数对GaSb量子点生长的影响.研究表明在GaAs衬底上、富镓生长源配比以及较短的生长源和衬底接触时间下更易获得高质量的GaSb量子点.上述生长条件的摸索和研究对于GaSb量子点器件应用具有重要意义.
GaSb quantum dot material was successfully grown on GaAs substrate by an improved rapid push boat liquid phase epitaxy technique.The morphology, size, density and size distribution of GaSb QDs under different growth parameters were observed by atomic force microscopy Etc.) The effects of growth parameters such as different substrates, different growth source ratios, different contact time of growth source and substrate on the growth of GaSb quantum dots have been analyzed. The results show that on the GaAs substrate, GaSb quantum dots are easier to obtain than shorter growth source and substrate contact time.The exploration and research of the above growth conditions are of great significance to the application of GaSb quantum dot devices.