Effects of Ga-flux on Optical Properties and Morphology of GaN Grown via Molecular Beam Epitaxy

• 作 者: Zsebk O.
• 机 构: Department of Physics, Chalmers University of Technology, Gteborg SE-412 96, Sweden
• 出 处: Chemical Research in Chinese Universities
• 发表日期: 2004年06期
• 关键词: tempera sapphire donor exciton suitability impurity thick struc creased nucleati

A series of GaN layers was grown on sapphire (0001) substrates under various growth conditions by means of the molecular beam epitaxy(MBE) method, the optical characteristics and surface morphologies of the samples were studied. The results show that the line width of the GaN emission gradually decreases and the peak shifts under the Ga-rich condition by increasing the Ga-flux on keeping all other growth conditions unchanged. It has been also found that the resulted morphology is directly related to the Ga-flux.

A series of GaN layers was grown on sapphire (0001) substrates under various growth conditions by means of the molecular beam epitaxy (MBE) method, the optical characteristics and surface morphologies of the samples were studied. The results show that the line width of the GaN has gradual variations and the peak shifts under the Ga-rich condition by increasing the Ga-flux on keeping all other growth conditions unchanged. It has been found that the resulting morphology is directly related to the Ga-flux.