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本文研究了非晶硅发射区双极晶体管的低温特性，得出了如下结论：低温下电流增益随基区杂质浓度的上升而下降，不同于常规同质结双极晶体管的情况，集电极电流则随基区杂质浓度的上升而上升。这些结果将为低温双极晶体管的设计提供理论依据。
In this paper, the low-temperature characteristics of amorphous silicon emitter bipolar transistors are studied. The conclusions are drawn as follows: The current gain decreases with the rise of the impurity concentration in the base region at low temperature. Unlike conventional homogeneous junction bipolar transistors, the collector current With the increase of base impurity concentration. These results will provide a theoretical basis for the design of cryogenic bipolar transistors.