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重庆光电技术研究所新产品简介ＧＤ５２５１Ｙ型低压硅雪崩探测器１工作原理该低压硅雪崩探测器是一个典型的拉通型雪崩光电二极管。ｐ－区的杂质浓度比ｎ区的高１～２个数量级。当外加反向电压使器件全耗尽时，ｐ－区的电场强度比ｎ区的高，ｎ区则是主要的光吸收区，，区...
Chongqing Institute of Optoelectronics Technology New Product Brief GD5251Y low-voltage silicon avalanche detector 1 The working principle of the low-voltage silicon avalanche detector is a typical pull-type avalanche photodiode. The impurity concentration of the p-region is 1 to 2 orders of magnitude higher than that of the n region. When the reverse voltage is applied to make the device fully depleted, the electric field strength of the p-region is higher than that of the n region, and the n region is the main light absorption region.